FDM3622
FDM3622 is N-Channel MOSFET manufactured by onsemi.
MOSFET
- N-Channel, POWERTRENCH)
100 V, 4.4 A, 60 m W
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.
Features
- Max r DS(on) = 60 m W at VGS = 10 V, ID = 4.4 A
- Max r DS(on) = 80 m W at VGS = 6.0 V, ID = 3.8 A
- Low Miller Charge
- Low QRR Body Diode
- Optimized efficiency at high frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb- Free, Halide Free and is Ro HS pliant
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
±20
A 4.4 20
EAS Single Pulse Avalanche Energy (Note 3)
54 m J
PD Power Dissipation (Note 1a)
(Note 1b)
W 2.1 0.9
TJ, TSTG Operating and Storage Junction Temperature...
