FDM3622 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDM3622
Manufacturer	ON Semiconductor
File Size	163.71 KB
Description	N-Channel MOSFET
Datasheet	FDM3622 Datasheet
Additional preview pages of the FDM3622 datasheet.

Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A.
Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A.
Low Miller Charge.
Low QRR Body Diode.
Optimized efficiency at high frequencies.
UIS Capability (Single Pulse and Repetitive Pulse).
This Device is Pb.
Free, Halide Free and is RoHS Compliant MOSFET.

📁 Similar Datasheet

FDM3300NZ - N-Channel MOSFET (Fairchild Semiconductor)
FDM-2B - FDM-2B (ETC)
FDM100-0045SP - Buck Chopper (IXYS Corporation)
FDM21-05QC - Power MOSFET (IXYS Corporation)
FDM2452NZ - Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDM606P - P-Channel 1.8V Logic Level Power Trench MOSFET (Fairchild Semiconductor)
FDM6296 - Single N-Channel / Logic-Level / PowerTrench MOSFET (Fairchild Semiconductor)
FDMA0104 - N-Channel MOSFET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDMA037N08LC - N-Channel MOSFET
FDMA1023PZ - Dual P-Channel MOSFET
FDMA1024NZ - Dual N-Channel MOSFET
FDMA1027P - Dual P-Channel MOSFET
FDMA1028NZ - Dual N-Channel Power MOSFET
FDMA1029PZ - Dual P-Channel MOSFET

Published: Dec 20, 2023 |