FDM3622 Datasheet PDF (N-Channel MOSFET) | Download ON Semiconductor FDM3622

FDM3622 - N-Channel MOSFET

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Features

Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A.
Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A.
Low Miller Charge.
Low QRR Body Diode.
Optimized efficiency at high frequencies.
UIS Capability (Single Pulse and Repetitive Pulse).
This Device is Pb.
Free, Halide Free and is RoHS Compliant MOSFET.

Datasheet Details

Part number	FDM3622
Manufacturer	onsemi
File Size	163.71 KB
Description	N-Channel MOSFET
Datasheet	FDM3622 Datasheet
Additional preview pages of the FDM3622 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 100 V, 4.4 A, 60 mW FDM3622 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features • Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A • Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.

Published: Dec 20, 2023 |