FDM3622 Datasheet - ON Semiconductor

N-Channel MOSFET

* Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A

* Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A

* Low Miller Charge

* Low QRR Body Diode

* Optimized efficiency at high frequencies

* UIS Capability (Single Pulse and Repetitive Pulse)

* This Dev

FDM3622

163.71 KB

N-channel mosfet.

📁 Related Datasheet

FDM3622 N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDM3300NZ N-Channel MOSFET (Fairchild Semiconductor)

FDM-2B FDM-2B (ETC)

FDM100-0045SP Buck Chopper (IXYS Corporation)

FDM21-05QC Power MOSFET (IXYS Corporation)

FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)

FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET (Fairchild Semiconductor)

FDM6296 Single N-Channel / Logic-Level / PowerTrench MOSFET (Fairchild Semiconductor)

FDMA0104 N-Channel MOSFET (Fairchild Semiconductor)

FDMA037N08LC N-Channel MOSFET (ON Semiconductor)

TAGS

FDM3622 N-Channel MOSFET ON Semiconductor

Image Gallery