FDMC010N08C datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Shielded Gate MOSFET Technology
* Max RDS(on) = 10 mW at VGS = 10 V, ID = 16 A
* Max RDS(on) = 25 mW at VGS = 6 V, ID = 8 A
* 50% Lower Qrr than Other M.

Description

This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in .

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