dual n-channel mosfet.
* Q1: N−Channel
* Max RDS(on) = 22 mW at VGS = 10 V, ID = 6 A
* Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5 A
* Q2: N−Channel
* Max RDS(on) = 10 mW at .
* Mobile Computing
* Mobile Internet Devices
* General Purpose Point of Load
DATA SHEET www.onsemi.com
Pin.
This device includes two specialized N−Channel MOSFETs in a
dual Power 33 (3 mm x 3 mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchr.
Image gallery
TAGS
Download (Size : 378.44KB)