FDMC7570S Datasheet - ON Semiconductor

FDMC7570S N-Channel MOSFET

The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Sch.

FDMC7570S Features

* Max RDS(on) = 2 mW at VGS = 10 V, ID = 27 A

* Max RDS(on) = 2.9 mW at VGS = 4.5 V, ID = 21.5 A

* Advanced Package and Combination for Low RDS(on) and High Efficiency

* SyncFET Schottky Body Diode

* 100% UIL Tested

* These Devices are Pb

* Free

FDMC7570S-ONSemiconductor.pdf