FDMC7672 - N-Channel Power Trench MOSFET
* Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 16.9 A * Max rDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 15.0 A * High performance technology for extremely low rDS(on) * Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor
