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FDMC7660S N-Channel Power Trench SyncFET

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Description

FDMC7660S N-Channel Power Trench® SyncFET™ January 2014 FDMC7660S N-Channel Power Trench® SyncFET™ 30 V, 20 A, 2.2 mΩ .
The FDMC7660S has been designed to minimize losses in power conversion applications.

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Datasheet Specifications

Part number
FDMC7660S
Manufacturer
Fairchild Semiconductor
File Size
298.06 KB
Datasheet
FDMC7660S_FairchildSemiconductor.pdf
Description
N-Channel Power Trench SyncFET

Features

* Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
* Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A
* High performance technology for extremely low rDS(on)

Applications

* Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications
* Synchronous Rectifier for DC/DC Converter

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