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FDMC7678 N-Channel MOSFET

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Description

FDMC7678 N-Channel Power Trench® MOSFET FDMC7678 N-Channel Power Trench® MOSFET 30 V, 19.5 A, 5.3 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-.

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Features

* Max rDS(on) = 5.3 mΩ at VGS = 10 V, ID = 17.5 A
* Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15.0 A
* High performance technology for extremely low rDS(on)

Applications

* common in Notebook Computers and Portable Battery Packs. Application
* DC - DC Buck Converters
* Notebook battery power management
* Load switch in Notebook Top Bottom 8 7 6 5 DD D D D D D D 5 6 7 8 4 3 2 1 G S S S 1 2 3 4 G S S S Pin 1 MLP 3.3x3.3 MOSFET Maximu

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