FDMC86102 mosfet equivalent, n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max RDS(on) = 24 mW at VGS = 10 V, ID = 7A
* Max RDS(on) = 38 mW at VGS = 6 V, ID = 5 A
* Low Profile − 1 mm max in Po.
* DC−DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Parameter
Ratings Unit
VDS Dra.
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