Datasheet Summary
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
100 V, 18 A, 23 mW
General Description This N- Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
- Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5.5 A
- Low Profile
- 1 mm Max in Power 33
- Pb- Free, Halide Free and RoHS pliant
Applications
- DC- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
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Drain to Source...
