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FDMD8900 - N-Channel Power MOSFET

General Description

This devices utilizes two optimized N

thermally enhanced power package.

The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.

Key Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A.
  • Max rDS(on) = 5 mW at VGS = 4.5 V, ID = 17 A.
  • Max rDS(on) = 6.5 mW at VGS = 3.8 V, ID = 15 A.
  • Max rDS(on) = 8.3 mW at VGS = 3.5 V, ID = 14 A Q2: N.
  • Channel.
  • Max rDS(on) = 5.5 mW at VGS = 10 V, ID = 17 A.
  • Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A.
  • Max rDS(on) = 9 mW at VGS = 3.8 V, ID = 13 A.
  • Max rDS(on) = 12 mW at VGS = 3.5 V, ID = 12 A.

📥 Download Datasheet

Datasheet Details

Part number FDMD8900
Manufacturer onsemi
File Size 447.94 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FDMD8900 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET, N-Channel, POWERTRENCH) Q1: 30 V, 66 A, 4 mW Q2: 30 V, 42 A, 5.5 mW FDMD8900 General Description This devices utilizes two optimized N−ch FETs in a dual 3.3 x 5 mm thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM. Features Q1: N−Channel • Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5 mW at VGS = 4.5 V, ID = 17 A • Max rDS(on) = 6.5 mW at VGS = 3.8 V, ID = 15 A • Max rDS(on) = 8.3 mW at VGS = 3.5 V, ID = 14 A Q2: N−Channel • Max rDS(on) = 5.5 mW at VGS = 10 V, ID = 17 A • Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A • Max rDS(on) = 9 mW at VGS = 3.8 V, ID = 13 A • Max rDS(on) = 12 mW at VGS = 3.