Description
This devices utilizes two optimized N
ch FETs in a dual 3.3 x 5 mm
thermally enhanced power package.The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.
Features
- Q1: N.
- Channel.
- Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A.
- Max rDS(on) = 5 mW at VGS = 4.5 V, ID = 17 A.
- Max rDS(on) = 6.5 mW at VGS = 3.8 V, ID = 15 A.
- Max rDS(on) = 8.3 mW at VGS = 3.5 V, ID = 14 A
Q2: N.
- Channel.
- Max rDS(on) = 5.5 mW at VGS = 10 V, ID = 17 A.
- Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A.
- Max rDS(on) = 9 mW at VGS = 3.8 V, ID = 13 A.
- Max rDS(on) = 12 mW at VGS = 3.5 V, ID = 12 A.
FDMD8900-ONSemiconductor.pdf
