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FDMD8900 - N-Channel Power MOSFET

FDMD8900 Description

MOSFET, N-Channel, POWERTRENCH) Q1: 30 V, 66 A, 4 mW Q2: 30 V, 42 A, 5.5 mW FDMD8900 General .
This devices utilizes two optimized N. ch FETs in a dual 3.

FDMD8900 Features

* Q1: N
* Channel
* Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A
* Max rDS(on) = 5 mW at VGS = 4.5 V, ID = 17 A
* Max rDS(on) = 6.5 mW at VGS = 3.8 V, ID = 15 A
* Max rDS(on) = 8.3 mW at VGS = 3.5 V, ID = 14 A Q2: N
* Channel
* Max rDS(on) = 5.5 mW at

FDMD8900 Applications

* Computing
* Buck, Boost and Buck/Boost Applications
* General Purpose POL www. onsemi. com D1 1 D1 2 D1 3 G2 4 S2 5 S2 6 12 G1 11 G1R 10 D2/S1 9 D2/S1 8 D2/S1 7 D2/S1 Power 3.3 x 5 PQFN12 3.3X5, 0.65P CASE 483BN MARKING DIAGRAM $Y&Z&3&K 8900 $Y &Z &3 &K 8900 = ON Semi

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