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FDMD8630

Manufacturer: onsemi

FDMD8630 datasheet by onsemi.

FDMD8630 datasheet preview

FDMD8630 Datasheet Details

Part number FDMD8630
Datasheet FDMD8630-ONSemiconductor.pdf
File Size 411.09 KB
Manufacturer onsemi
Description N-Channel MOSFET
FDMD8630 page 2 FDMD8630 page 3

FDMD8630 Overview

This package integrates two N−Channel devices connected internally in mon−source configuration. This enables very low package parasitics and optimized thermal path to the mon source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.

FDMD8630 Key Features

  • mon Source Configuration to Eliminate PCB Routing
  • Large Source Pad on Bottom of Package for Enhanced Thermals
  • Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 38 A
  • Max rDS(on) = 1.3 mW at VGS = 4.5 V, ID = 33 A
  • Ideal for Flexible Layout in Secondary Side Synchronous
  • 100% UIL Tested
  • This Device is Pb-Free and is RoHS pliant
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