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FDMD8630 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: FDMD8630 MOSFET – N-Channel, POWERTRENCH), Dual 30 V, 167 A, 1.

General Description

This package integrates two N−Channel devices connected internally in mon−source configuration.

This enables very low package parasitics and optimized thermal path to the mon source pad on the bottom.

Provides a very small footprint (5 x 6 mm) for higher power density.

Key Features

  • Common Source Configuration to Eliminate PCB Routing.
  • Large Source Pad on Bottom of Package for Enhanced Thermals.
  • Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 38 A.
  • Max rDS(on) = 1.3 mW at VGS = 4.5 V, ID = 33 A.
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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FDMD8630 Distributor