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FDMD8630 - N-Channel MOSFET

Datasheet Summary

Description

This package integrates two N Channel devices connected internally in common

source configuration.

This enables very low package parasitics and optimized thermal path to the common source pad on the bottom.

Provides a very small footprint (5 x 6 mm) for higher power density.

Features

  • Common Source Configuration to Eliminate PCB Routing.
  • Large Source Pad on Bottom of Package for Enhanced Thermals.
  • Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 38 A.
  • Max rDS(on) = 1.3 mW at VGS = 4.5 V, ID = 33 A.
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet preview – FDMD8630

Datasheet Details

Part number FDMD8630
Manufacturer ON Semiconductor
File Size 411.09 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMD8630 Datasheet
Additional preview pages of the FDMD8630 datasheet.

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Full PDF Text Transcription

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FDMD8630 MOSFET – N-Channel, POWERTRENCH), Dual 30 V, 167 A, 1.0 mW General Description This package integrates two N−Channel devices connected internally in common−source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density. Features • Common Source Configuration to Eliminate PCB Routing • Large Source Pad on Bottom of Package for Enhanced Thermals • Max rDS(on) = 1.0 mW at VGS = 10 V, ID = 38 A • Max rDS(on) = 1.3 mW at VGS = 4.
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