Datasheet Summary
MOSFET, N-Channel Shielded Gate, POWERTRENCH)
80 V, 116 A, 4.2 mW
General Description This N- Channel MV MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized to minimise on- state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 37 A
- Max rDS(on) = 6.1 mW at VGS = 4.5 V, ID = 29 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant
Typical Applications
- Primary DC- DC...