FDMS5361L-F085
FDMS5361L-F085 is N-Channel Power MOSFET manufactured by onsemi.
Features
- Typ r DS(on) = 11.7 mΩ at VGS = 10 V, ID = 16.5 A
- Typ Qg(tot) = 37 n C at VGS = 10 V, ID = 16.5 A
- UIS Capability
- Ro HS pliant
- Qualified to AEC Q101
Applications
- Automotive Engine Control
- Powertrain Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Primary Switch for 12V Systems
For current package drawing, please refer to the our website at .onsemi.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
Drain to Source Voltage Gate to Source Voltage Drain Current
- Continuous (VGS=10) (Note 1) Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25o C
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
Ratings 60 ±20 35
See Figure4 82 75 0.5
-55 to + 175 2.0 50
Units V V
A m J W W/o C o C o C/W o C/W
Package Marking and Ordering Information
Device Marking...
