FDMS86200 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDMS86200
Manufacturer	ON Semiconductor
File Size	478.46 KB
Description	N-Channel MOSFET
Datasheet	FDMS86200 Datasheet
Additional preview pages of the FDMS86200 datasheet.

Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.This process has been optimized for the on state resistance and yet maintain superior switching performance.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A.
Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A.
Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
MSL1 Robust Package Design.
100% UIL Tested.
RoHS Compliant.

📁 Similar Datasheet

FDMS86200DC - MOSFET (Fairchild Semiconductor)
FDMS86201 - N-Channel MOSFET (Fairchild Semiconductor)
FDMS86202 - MOSFET (Fairchild Semiconductor)
FDMS86202ET120 - MOSFET (Fairchild Semiconductor)
FDMS8622 - N-Channel MOSFET (Fairchild Semiconductor)
FDMS86250 - N-Channel MOSFET (Fairchild Semiconductor)
FDMS86252 - N-Channel MOSFET (Fairchild Semiconductor)
FDMS86255 - MOSFET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDMS86263P - P-Channel MOSFET
FDMS86101 - N-Channel MOSFET
FDMS86101DC - N-Channel MOSFET
FDMS86163P - P-Channel MOSFET
FDMS86181 - N-Channel MOSFET
FDMS86300DC - N-Channel MOSFET

Published: Oct 15, 2019 |