FDMS86200 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMS86200 Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A
- Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A
- Advanced Package and Silicon bination for Low RDS(on) and
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant