FDMS86200
FDMS86200 is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 18 m W at VGS = 10 V, ID = 9.6 A
- Max RDS(on) = 21 m W at VGS = 6 V, ID = 8.8 A
- Advanced Package and Silicon bination for Low RDS(on) and
High Efficiency
- MSL1 Robust Package Design
- 100% UIL Tested
- Ro HS pliant
Applications
- DC- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current:
- Continuous TC = 25°C
- Continuous TA = 25°C (Note 1a)
- Pulsed
±20
A 35 9.6 100
EAS Single Pulse Avalanche Energy (Note 3)
220 m J
Power Dissipation:
TC = 25°C
TA = 25°C (Note 1a)
W 104 2.5
TJ, TSTG Operating and Storage Junction Temperature Range
- 55...
