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  ON Semiconductor Electronic Components Datasheet  

FDMS86200 Datasheet

N-Channel MOSFET

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FDMS86200
MOSFET, N‐Channel,
Shielded Gate,
POWERTRENCH)
150 V, 35 A, 18 mW
General Description
This NChannel MOSFET is produced using ON Semiconductors
advanced POWERTRENCH® process that incorporates Shielded
Gate technology. This process has been optimized for the onstate
resistance and yet maintain superior switching performance.
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A
Max rDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A
Advanced Package and Silicon combination for low rDS(on) and high
efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
Applications
DCDC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Drain Current:
Continuous TC = 25°C
Continuous TA = 25°C (Note 1a)
Pulsed
150 V
±20 V
A
35
9.6
100
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
TC = 25°C
TA = 25°C (Note 1a)
Operating and Storage Junction Tempera-
ture Range
220
104
2.5
55 to
+150
mJ
W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
SD
SD
SD
GD
N-Channel MOSFET
Top
Bottom
SS
S
Pin
G
1
DDDD
Power 56
(PQFN8)
CASE 483AE
MARKING DIAGRAM
SD
S $Y&Z&3&K D
FDMS
S 86200
D
GD
$Y
&Z
&3
&K
FDMS86200
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2018 Rev. 2
1
Publication Order Number:
FDMS86200/D


  ON Semiconductor Electronic Components Datasheet  

FDMS86200 Datasheet

N-Channel MOSFET

No Preview Available !

FDMS86200
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Quantity
FDMS86200
FDMS86200
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
3000/Tape&Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Value
1.2
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage
DBVDSS
/DTJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current, Forward
ON CHARACTERISTICS
ID = 250 mA, VGS = 0 V
ID = 250 mA, referenced to 25°C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VGS(th)
DVGS(th)
/DTJ
rDS(on)
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
ID = 250 mA, referenced to 25°C
VGS = 10 V, ID = 9.6 A
VGS = 6 V, ID = 8.8 A
VGS = 10 V, ID = 9.6 A, TJ = 125°C
VDS = 10 V, ID = 9.6 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
SWITCHING CHARACTERISTICS
VDS = 75 V, VGS = 0 V, f = 1 MHz
f = 1MHz
td(on)
tr
td(off)
tf
Qg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
VDD = 75 V, ID = 9.6 A, VGS = 10 V,
RGEN = 6 W
VGS = 0 V to 10 V, VDD = 75 V,
ID = 9.6 A
VGS = 0 V to 5 V, VDD = 75 V,
ID = 9.6 A
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
VDD = 75 V, ID = 9.6 A
Min Typ Max Unit
150
110
V
mV/°C
1 mA
100 nA
2.0 2.5 4.0
V
10 mV/°C
15 18 mW
17 21
28 34
33 S
2041 2715
pF
203 270
pF
10 16 pF
0.1 1.2
3
W
13 23 ns
7.9 16
ns
27 44 ns
5.8 12
ns
33 46 nC
18 26 nC
7.9 nC
7.7 nC
www.onsemi.com
2


Part Number FDMS86200
Description N-Channel MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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