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FDMS86200DC N-Channel MOSFET

FDMS86200DC Description

MOSFET POWERTRENCH), N-Channel, DUAL COOL), Shielded Gate 150 V, 40 A, 17mW FDMS86200DC General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.

FDMS86200DC Features

* Shielded Gate MOSFET Technology
* DUAL COOL® Top Side Cooling DFN8 Package
* Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A
* Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A
* High Performance Technology for Extremely Low rDS(on)
* 100% UIL Tested

FDMS86200DC Applications

* Primary MOSFET in DC
* DC Converters
* Secondary Synchronous Rectifier
* Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V ID Drain Cu

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDMS86200DC-like datasheet