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MOSFET POWERTRENCH), N-Channel, DUAL COOL), Shielded Gate
150 V, 40 A, 17mW
FDMS86200DC
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.
Features
• Shielded Gate MOSFET Technology • DUAL COOL® Top Side Cooling DFN8 Package • Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A • Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.
FDMS86200DC Datasheet
