FDMS86200DC Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient.
FDMS86200DC Key Features
- Shielded Gate MOSFET Technology
- DUAL COOL® Top Side Cooling DFN8 Package
- Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A
- Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A
- High Performance Technology for Extremely Low rDS(on)
- 100% UIL Tested
- RoHS pliant
FDMS86200DC Applications
- Primary MOSFET in DC − DC Converters