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FDMS86200DC Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.

Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance.

Overview

MOSFET POWERTRENCH), N-Channel, DUAL COOL), Shielded Gate 150 V, 40 A, 17mW FDMS86200DC.

Key Features

  • Shielded Gate MOSFET Technology.
  • DUAL COOL® Top Side Cooling DFN8 Package.
  • Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A.
  • Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A.
  • High Performance Technology for Extremely Low rDS(on).
  • 100% UIL Tested.
  • RoHS Compliant.

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