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FDMS86569-F085 - N-Channel MOSFET

Features

  • Typical RDS(on) = 4.3 mΩ at VGS = 10V, ID = 65 A.
  • Typical Qg(tot) = 36 nC at VGS = 10V, ID = 65 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86569-F085 N-Channel PowerTrench® MOSFET FDMS86569-F085 N-Channel PowerTrench® MOSFET 60 V, 65 A, 5.6 mΩ Features „ Typical RDS(on) = 4.3 mΩ at VGS = 10V, ID = 65 A „ Typical Qg(tot) = 36 nC at VGS = 10V, ID = 65 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
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