FDN337N - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDN337N
Manufacturer	ON Semiconductor
File Size	278.62 KB
Description	N-Channel MOSFET
Datasheet	FDN337N Datasheet
Additional preview pages of the FDN337N datasheet.

Product details

Description

SUPERSOTt 3 N Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance. line power loss are needed in a v

Features

2.2 A, 30 V.
RDS(on) = 0.065 W @ VGS = 4.5 V.
RDS(on) = 0.082 W @ VGS = 2.5 V.
Industry Standard Outline SOT.
23 Surface Mount Package Using Proprietary.

📁 Similar Datasheet

FDN335N - N-Channel MOSFET (Fairchild Semiconductor)
FDN336P - single P-Channel MOSFET (Fairchild Semiconductor)
FDN338 - FET (DCY)
FDN338P - P-Channel MOSFET (Fairchild Semiconductor)
FDN339AN - N-Channel MOSFET (Fairchild Semiconductor)
FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
FDN306P - P-Channel MOSFET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDN304PZ - P-Channel MOSFET
FDN308P - P-Channel MOSFET
FDN327N - N-Channel MOSFET
FDN340P - P-Channel MOSFET
FDN342P - P-Channel MOSFET
FDN352AP - P-Channel MOSFET

Published: Mar 22, 2020 |