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Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect
FDN337N
General Description SUPERSOTt−3 N−Channel logic level enhancement mode power
field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package.
Features
• 2.2 A, 30 V
♦ RDS(on) = 0.065 W @ VGS = 4.5 V ♦ RDS(on) = 0.082 W @ VGS = 2.
FDN337N Datasheet
