FDN337N N-Channel MOSFET Datasheet

Part: FDN337N
Manufacturer: onsemi
Size: 278.62 KB

FDN337N Key Features

2.2 A, 30 V
RDS(on) = 0.065 W @ VGS = 4.5 V
RDS(on) = 0.082 W @ VGS = 2.5 V
Industry Standard Outline SOT-23 Surface Mount Package Using
High Density Cell Design for Extremely Low RDS(on)
Exceptional on-Resistance and Maximum DC Current Capability
This Device is Pb-Free and Halogen Free

Other FDN337N Datasheets

Manufacturer	Part Number	Description
Fairchild Semiconductor	FDN337N	N-Channel MOSFET
Kexin Semiconductor	FDN337N	N-Channel MOSFET

View all FDN337N datasheets →

FDN337N Description

SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMCIA cards, and other battery powered circuits where fast...