FDP20N50F mosfet equivalent, n-channel mosfet.
* RDS(on) = 210 mW (Typ.) @ VGS = 10 V, ID = 10 A
* Low Gate Charge (Typ. 50 nC)
* Low Crss (Typ. 27 pF)
* 100% Avalanche Tested
* Improve dv/dt Capab.
in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power conve.
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