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FDP52N20 - N-Channel MOSFET

Datasheet Summary

Description

family based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 41 mW (Typ. ) @ VGS = 10 V, ID = 26 A.
  • Low Gate Charge (Typ. 49 nC).
  • Low CRSS (Typ. 66 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDP52N20

Datasheet Details

Part number FDP52N20
Manufacturer ON Semiconductor
File Size 402.90 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP52N20 Datasheet
Additional preview pages of the FDP52N20 datasheet.

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Full PDF Text Transcription

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FDP52N20 N‐Channel UniFET MOSFET 200 V, 52 A, 49 mW Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 41 mW (Typ.) @ VGS = 10 V, ID = 26 A • Low Gate Charge (Typ. 49 nC) • Low CRSS (Typ. 66 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC−DC Power Supply www.onsemi.
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