* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tail.

resistance.
* HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management .

Features
* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state
* Max rDS(on) = 12mΩ, VGS = -4.5V, .

FDS6673BZ

FDS6673BZ_F085

FDS6673AZ

FDS6670A

FDS6670AS

FDS6670S

FDS6672A

FDS6675

FDS6675A

FDS6675BZ

FDS6676

FDS6676AS

FDS6676AS-G