Part number:
FDS6673BZ-F085
Manufacturer:
File Size:
504.98 KB
Description:
P-channel mosfet.
* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
* Extended VGS range (-25V) for ba
FDS6673BZ-F085 Datasheet (504.98 KB)
FDS6673BZ-F085
504.98 KB
P-channel mosfet.
📁 Related Datasheet
FDS6673BZ P-Channel MOSFET (ON Semiconductor)
FDS6673BZ P-Channel MOSFET (Fairchild Semiconductor)
FDS6673BZ_F085 P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDS6673AZ P-Channel MOSFET (Fairchild Semiconductor)
FDS6670A N-Channel MOSFET (Fairchild Semiconductor)
FDS6670AS 30V N-Channel MOSFET (Fairchild Semiconductor)
FDS6670S N-Channel MOSFET (Fairchild Semiconductor)
FDS6672A N-Channel MOSFET (Fairchild Semiconductor)
FDS6675 Single P-Channel/ Logic Level/ PowerTrenchTM MOSFET (Fairchild Semiconductor)
FDS6675 P-Channel MOSFET (ON Semiconductor)