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FDS6673BZ-F085 - P-Channel MOSFET

Features

  • Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state.
  • Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A.
  • Extended VGS range (-25V) for battery.

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Datasheet preview – FDS6673BZ-F085

Datasheet Details

Part number FDS6673BZ-F085
Manufacturer ON Semiconductor
File Size 504.98 KB
Description P-Channel MOSFET
Datasheet download datasheet FDS6673BZ-F085 Datasheet
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Full PDF Text Transcription

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FDS6673BZ-F085 P-Channel PowerTrench® MOSFET FDS6673BZ-F085 P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Description Features „ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state „ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A „ Extended VGS range (-25V) for battery applications resistance. „ HBM ESD protection level of 6.5kV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
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