FFSH5065B-F085 diode equivalent, sic schottky diode.
* Max Junction Temperature 175°C
* Avalanche Rated 225 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
*.
* Automotive HEV−EV Onboard Chargers
* Automotive HEV−EV DC−DC Converters
DATA SHEET www.onsemi.com
TO−247−2LD.
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.
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