FFSH5065B-F085 Datasheet | onsemi

Description Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Features - Max Junction Temperature 175°C - Avalanche Rated 225 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery/No Forward Recovery - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Applications - Automotive HEV- EV Onboard Chargers - Automotive HEV- EV DC- DC Converters DATA SHEET .onsemi. TO- 247- 2LD CASE 340DA 1. Cathode 2. Anode Schottky Diode MARKING DIAGRAM AYWWKK FFSH 5065B A YWW KK FFSH5065B = Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor ponents Industries, LLC, 2019 February, 2023 - Rev. 1 Publication Order Number: FFSH5065B- F085/D FFSH5065B- F085 MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter VRRM Peak Repetitive Reverse Voltage EAS Single Pulse Avalanche Energy (Note 1) Continuous Rectified Forward Current IF,...