FFSP05120A Datasheet | onsemi

FFSP05120A - Silicon Carbide Schottky Diode .onsemi. FFSP05120A Silicon Carbide Schottky Diode 1200 V, 5 A Features - Max Junction Temperature 175 °C - Avalanche Rated 55 mJ - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery / No Forward Recovery Applications - General Purpose - SMPS, Solar Inverter, UPS - Power Switching Circuits Description Silicon Carbide (SiC) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. 1 2 TO-220-2L 1. Cathode 2. Anode 1....