* Max Junction Temperature 175°C
* Avalanche Rated 72 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www.onsemi.com 1. Catho.

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

FFSP10120A

FFSP15120A

FFSP05120A

FFSP0665A

FFSP08120A

FFSP0865A

FFSP20120A

FFSP2065A

FFSP2065B

FFSP2065BDN-F085

FFSP3065A

FFSPF0865A

FFSB0665A