Datasheet Summary
FGA25N120ANTDTU
- 1200 V, 25 A NPT Trench IGBT
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
- NPT Trench Technology, Positive Temperature Coefficient
- Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C
- Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25°C
- Extremely Enhanced Avalanche Capability
Applications
- Induction Heating, Microwave Oven
Description
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as...
