Datasheet4U Logo Datasheet4U.com

FGH75T65UPD-F155 - IGBT

Download the FGH75T65UPD-F155 datasheet PDF. This datasheet also covers the FGH75T65UPD variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera

tor where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ. ) @ IC = 75 A.
  • 100% of Parts Tested ILM.
  • High Input Impedance.
  • Tightened Parameter Distribution.
  • Short Circuit Ruggedness > 5 ms @ 25°C.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FGH75T65UPD-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FGH75T65UPD 75A Field Stop Trench IGBT Fairchild Semiconductor
FGH75N60SF 75A Field Stop IGBT Fairchild Semiconductor
FGH75N60SFTU 75A Field Stop IGBT Fairchild Semiconductor
FGH75N60UF 75A Field Stop IGBT Fairchild Semiconductor
FGH75N60UFTU 75A Field Stop IGBT Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FGH75T65UPD IGBT
FGH75T65SHD IGBT
FGH75T65SHDT IGBT
FGH75T65SHDTL4 IGBT
FGH75T65SHDTLN4 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155 Description Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 75 A • 100% of Parts Tested ILM • High Input Impedance • Tightened Parameter Distribution • Short Circuit Ruggedness > 5 ms @ 25°C • These Devices are Pb−Free and are RoHS Compliant Applications • Solar Inverter, UPS, Digital Power Generator www.onsemi.