Datasheet4U Logo Datasheet4U.com

FGHL50T65LQDTL4 - IGBT

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ. ) @ IC = 50 A.
  • 100% of the Parts are Tested for ILM (Note 2).
  • Smooth and Optimized Switching.
  • Tight Parameter Distribution.
  • Co.
  • packed with Soft and Fast Recovery Diode.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Full PDF Text Transcription for FGHL50T65LQDTL4 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FGHL50T65LQDTL4. For precise diagrams, and layout, please refer to the original PDF.

Field Stop Trench IGBT 50 A, 650 V FGHL50T65LQDTL4 Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copack Diode technology. Features • Maxim...

View more extracted text
ology and Full current rated copack Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.

More Datasheets from onsemi

Part Number Description
FGHL50T65LQDT IGBT
FGHL50T65MQD IGBT
FGHL50T65MQDT IGBT
FGHL50T65MQDTL4 IGBT
FGHL50T65SQ IGBT
FGHL50T65SQDT IGBT
FGHL40S65UQ IGBT
FGHL40T120RWD IGBT
FGHL40T65LQDT IGBT
FGHL40T65MQD IGBT