* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.) @ IC = 50 A
* 100% of the Parts are Tested for ILM (Note 2)
FGHL50T65LQDTL4 Datasheet (202.90 KB)
FGHL50T65LQDTL4
202.90 KB
Igbt.
Field Stop Trench IGBT 50 A, 650 V FGHL50T65LQDTL4 Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copack Diode techno.
📁 Related Datasheet
FGHL50T65LQDT IGBT (ON Semiconductor)
FGHL50T65MQD IGBT (ON Semiconductor)
FGHL50T65MQDT IGBT (ON Semiconductor)
FGHL50T65MQDTL4 IGBT (ON Semiconductor)
FGHL50T65SQ IGBT (ON Semiconductor)
FGHL50T65SQDT IGBT (ON Semiconductor)
FGHL40S65UQ IGBT (ON Semiconductor)
FGHL40T120RWD IGBT (ON Semiconductor)
FGHL40T65LQDT IGBT (ON Semiconductor)
FGHL40T65MQD IGBT (ON Semiconductor)
