FGY100T120RWD - Power IGBT

Product Overview

ON Semiconductor

Datasheet Details

Part number	FGY100T120RWD
Manufacturer	ON Semiconductor
File Size	279.60 KB
Description	Power IGBT
Datasheet	FGY100T120RWD Datasheet
Additional preview pages of the FGY100T120RWD datasheet.

Product details

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3 lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high power switch.

Features

Low Conduction Loss and Optimized Switching.
Maximum Junction Temperature.
TJ = 175°C.
Positive Temperature Coefficient for Easy Parallel Operation.
High Current Capability.
100% of the Parts are Dynamically Tested.
Short Circuit Rated.
RoHS Compliant.

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Published: Feb 5, 2023 |