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FGY100T120RWD Datasheet, ON Semiconductor

FGY100T120RWD Datasheet, ON Semiconductor

FGY100T120RWD

datasheet Download (Size : 279.60KB)

FGY100T120RWD Datasheet

FGY100T120RWD igbt equivalent, power igbt.

FGY100T120RWD

datasheet Download (Size : 279.60KB)

FGY100T120RWD Datasheet

Features and benefits


* Low Conduction Loss and Optimized Switching
* Maximum Junction Temperature − TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
*.

Application

like motor control, UPS, data center and high−power switch. Features
* Low Conduction Loss and Optimized Switching <.

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in variou.

Image gallery

FGY100T120RWD Page 1 FGY100T120RWD Page 2 FGY100T120RWD Page 3

TAGS

FGY100T120RWD
Power
IGBT
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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