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FGY120T65SPD-F085 Datasheet IGBT

Manufacturer: onsemi

Overview: Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120.

General Description

VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/dt Collector Current (Note 1) Collector Current Nominal Current Pulsed Collector Current Diode Forward Current (Note 1) Diode Forward Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time Voltage Transient Ruggedness (Note 2) @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C @ TC = 25°C TJ Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp.

for soldering Purposes, 1/8” from case for 5 s 1.

Limite

Key Features

  • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ. ) @ IC = 120 A.
  • Maximum Junction Temperature : TJ = 175°C.
  • Positive Temperature Co.
  • efficient.
  • Tight Parameter Distribution.
  • High Input Impedance.
  • 100% of the Parts are Dynamically Tested.
  • Short Circuit Ruggedness > 6 ms @ 25°C.
  • Copacked with Soft, Fast Recovery Extremefast Diode.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This is a Pb.
  • Fre.

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FGY120T65SPD-F085 Distributor