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FGY120T65SPD-F085

Manufacturer: onsemi

FGY120T65SPD-F085 datasheet by onsemi.

FGY120T65SPD-F085 datasheet preview

FGY120T65SPD-F085 Datasheet Details

Part number FGY120T65SPD-F085
Datasheet FGY120T65SPD-F085-ONSemiconductor.pdf
File Size 473.92 KB
Manufacturer onsemi
Description IGBT
FGY120T65SPD-F085 page 2 FGY120T65SPD-F085 page 3

FGY120T65SPD-F085 Overview

VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/dt Collector Current (Note 1) Collector Current Nominal Current Pulsed Collector Current Diode Forward Current (Note 1) Diode Forward Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time Voltage Transient Ruggedness (Note 2) @ TC = 25°C @ TC = 100°C @ TC =...

FGY120T65SPD-F085 Key Features

  • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A
  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperature Co-efficient
  • Tight Parameter Distribution
  • High Input Impedance
  • 100% of the Parts are Dynamically Tested
  • Short Circuit Ruggedness > 6 ms @ 25°C
  • Copacked with Soft, Fast Recovery Extremefast Diode
  • AEC-Q101 Qualified and PPAP Capable
  • This is a Pb-Free Device
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