FGY120T65SPD-F085 - IGBT

Datasheet Summary

Description

VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/dt Collector Current (Note 1) Collector Current Nominal Current Pulsed Collector Current Diode Forward Current (Note 1) Diode Forward Current Maximum Power Dissipation

Features

Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ. ) @ IC = 120 A.
Maximum Junction Temperature : TJ = 175°C.
Positive Temperature Co.
efficient.
Tight Parameter Distribution.
High Input Impedance.
100% of the Parts are Dynamically Tested.
Short Circuit Ruggedness > 6 ms @ 25°C.
Copacked with Soft, Fast Recovery Extremefast Diode.
AEC.
Q101 Qualified and PPAP Capable.
This is a Pb.
Fre.

ON Semiconductor

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Datasheet Details

Part number	FGY120T65SPD-F085
Manufacturer	ON Semiconductor
File Size	473.92 KB
Description	IGBT
Datasheet	FGY120T65SPD-F085 Datasheet
Additional preview pages of the FGY120T65SPD-F085 datasheet.

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Full PDF Text Transcription

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Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A FGY120T65SPD-F085 Features • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.

Published: Oct 3, 2022 |