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FGY120T65SPD-F085 - IGBT

General Description

VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/dt Collector Current (Note 1) Collector Current Nominal Current Pulsed Collector Current Diode Forward Current (Note 1) Diode Forward Current Maximum Power Dissipation

Key Features

  • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ. ) @ IC = 120 A.
  • Maximum Junction Temperature : TJ = 175°C.
  • Positive Temperature Co.
  • efficient.
  • Tight Parameter Distribution.
  • High Input Impedance.
  • 100% of the Parts are Dynamically Tested.
  • Short Circuit Ruggedness > 6 ms @ 25°C.
  • Copacked with Soft, Fast Recovery Extremefast Diode.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This is a Pb.
  • Fre.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A FGY120T65SPD-F085 Features • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.