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FGY100T65SCDT - IGBT

Datasheet Summary

Description

series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co-efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.5 V (Typ. ) @ IC = 100 A.
  • High Input Impedance.
  • Fast Switching.
  • Short Cirruit Rated 5 ms.
  • Tighten Parameter Distribution.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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FGY100T65SCDT Field Stop Trench IGBT, Short Circuit Rated, 650V, 100A General Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A • High Input Impedance • Fast Switching • Short Cirruit Rated 5 ms • Tighten Parameter Distribution • These Devices are Pb−Free and are RoHS Compliant Applications • Solar, UPS, Motor Control, ESS, HVAC www.onsemi.
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