FGY160T65SPD-F085 Description
IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A FGY160T65SPD-F085 Benefits Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications Rugged Transient Reliability Outstanding Parallel Operation Performance with Balance Current Sharing Low EMI.
FGY160T65SPD-F085 Key Features
- AEC-Q101 Qualified and PPAP Capable
- Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-Efficient
- Tight Parameter Distribution
- High Input Impedance
- 100% of the Parts are Dynamically Tested
- Short circuit ruggedness > 6 ms @ 25°C
- Copacked with Soft, Fast Recovery Extremefast Diode
- This Device is Pb-Free, Halogen Free/BFR Free and are RoHS