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FGY160T65SPD-F085 Datasheet IGBT

Manufacturer: onsemi

Overview: IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A FGY160T65SPD-F085 Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient.

Key Features

  • AEC.
  • Q101 Qualified and PPAP Capable.
  • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 160 A.
  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • Efficient.
  • Tight Parameter Distribution.
  • High Input Impedance.
  • 100% of the Parts are Dynamically Tested.
  • Short circuit ruggedness > 6 ms @ 25°C.
  • Copacked with Soft, Fast Recovery Extremefast Diode.
  • This Device is Pb.

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FGY160T65SPD-F085 Distributor