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FGY160T65SPD-F085 - IGBT

Key Features

  • AEC.
  • Q101 Qualified and PPAP Capable.
  • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 160 A.
  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • Efficient.
  • Tight Parameter Distribution.
  • High Input Impedance.
  • 100% of the Parts are Dynamically Tested.
  • Short circuit ruggedness > 6 ms @ 25°C.
  • Copacked with Soft, Fast Recovery Extremefast Diode.
  • This Device is Pb.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A FGY160T65SPD-F085 Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding Parallel Operation Performance with Balance Current Sharing • Low EMI Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.