FGY160T65SPD-F085 - IGBT

Datasheet Summary

Features

AEC.
Q101 Qualified and PPAP Capable.
Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 160 A.
Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
Efficient.
Tight Parameter Distribution.
High Input Impedance.
100% of the Parts are Dynamically Tested.
Short circuit ruggedness > 6 ms @ 25°C.
Copacked with Soft, Fast Recovery Extremefast Diode.
This Device is Pb.

ON Semiconductor

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Datasheet Details

Part number	FGY160T65SPD-F085
Manufacturer	ON Semiconductor
File Size	3.34 MB
Description	IGBT
Datasheet	FGY160T65SPD-F085 Datasheet
Additional preview pages of the FGY160T65SPD-F085 datasheet.

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Full PDF Text Transcription

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IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A FGY160T65SPD-F085 Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding Parallel Operation Performance with Balance Current Sharing • Low EMI Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.

Published: Apr 1, 2020 |