FGY100T120SWD datasheet, igbt equivalent, ON Semiconductor

datasheet Download (Size : 280.93KB)

FGY100T120SWD Features and benefits

* Maximum Junction Temperature TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* Smooth and Optimized .

FGY100T120SWD Application

like Solar, UPS, and ESS. Features
* Maximum Junction Temperature TJ = 175°C
* Positive Temperature Coefficient .

FGY100T120SWD Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like So.

Image gallery