FGY60T120SQDN Description
This Insulated Gate Bipolar Transistor (IGBT).
FGY60T120SQDN Applications
- Extremely Efficient Trench with Field Stop Technology
- Part: FGY60T120SQDN
- Manufacturer: onsemi
- Size: 554.70 KB
Related onsemi Datasheets
| Part Number | Description |
|---|---|
| FGY100T120RWD | Power IGBT |
| FGY100T120SWD | IGBT |
| FGY100T65SCDT | IGBT |
| FGY120T65SPD-F085 | IGBT |
| FGY140T120SWD | N-Channel IGBT |