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FQA6N90C-F109 - N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 6 A, 900 V, RDS(on) = 2.3 Ω (Max. ) @ VGS = 10 V, ID = 3 A.
  • Low Gate Charge (Typ. 30 nC).
  • Low Crss (Typ. 11 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Full PDF Text Transcription

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FQA6N90C-F109 — N-Channel QFET® MOSFET FQA6N90C-F109 N-Channel QFET® MOSFET 900 V, 6 A, 2.3 Ω Features • 6 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 30 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G D S TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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