FQP47P06 mosfet equivalent, p-channel mosfet.
* −47 A, −60 V, RDS(on) = 26 mW (Max.) @ VGS = −10 V,
ID = −23.5 A
* Low Gate Charge (Typ. 84 nC)
* Low Crss (Typ. 320 pF)
* 100% Avalanche Tested
* 1.
Features
* −47 A, −60 V, RDS(on) = 26 mW (Max.) @ VGS = −10 V,
ID = −23.5 A
* Low Gate Charge (Typ. 84 nC)
.
This P−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.
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