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FQPF3N50C - 500V N-Channel MOSFET

This page provides the datasheet information for the FQPF3N50C, a member of the FQP3N50C 500V N-Channel MOSFET family.

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.

Features

  • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V.
  • Low gate charge ( typical 10 nC ).
  • Low Crss ( typical 8.5 pF).
  • Fast switching.
  • 100 % avalanche tested.
  • Improved dv/dt capability.

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Datasheet preview – FQPF3N50C

Datasheet Details

Part number FQPF3N50C
Manufacturer ON Semiconductor
File Size 0.97 MB
Description 500V N-Channel MOSFET
Datasheet download datasheet FQPF3N50C Datasheet
Additional preview pages of the FQPF3N50C datasheet.

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Full PDF Text Transcription

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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET QFET® FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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