Part number:
IRF530
Manufacturer:
File Size:
183.34 KB
Description:
Power field effect transistor.
IRF530 Product Preview TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS p.
* 25°C 1600 1400 1200 Crss 1000 800 Ciss 600 400 200 0 10 Crss 50 5 VGS VDS Coss 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns
IRF530
183.34 KB
Power field effect transistor.
IRF530 Product Preview TMOS E FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS p.
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