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MJ21196G Key Features

  • Total Harmonic Distortion Characterized
  • High DC Current Gain
  • Excellent Gain Linearity
  • High SOA
  • These Devices are Pb-Free and are RoHS pliant
  • 1.5V Collector Current
  • Continuous Collector Current
  • Peak (Note 1) Base Current
  • Continuous Total Device Dissipation @ TC = 25_C
  • For additional information on our Pb-Free strategy and soldering details, please download the onsemi Soldering and Mount

Other MJ21196G Datasheets

Manufacturer Part Number Description
Thinki Semiconductor Logo Thinki Semiconductor MJ21196G 250 Watt Silicon Type Metal Package Power Transistor
ON Logo onsemi MJ21196 Complementary Silicon Power Transistors
Motorola Logo Motorola Semiconductor MJ21196 (MJ21195 / MJ21196) Silicon Power Transistors

View all MJ21196G datasheets →

MJ21196G Description

Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

MJ21196G Applications

  • For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERR