MJE13003 Datasheet | onsemi

SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high- voltage, high- speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features - Reverse Biased SOA with Inductive Loads @ TC = 100_C - Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C tc @ 1 A, 100_C is 290 ns (Typ) - 700 V Blocking Capability - SOA and Switching Applications Information - Pb- Free Package is Available- MAXIMUM RATINGS Rating Collector- Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector- Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current - Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ - Peak (Note 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current - Continuous - Peak (Note 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Current - Continuous - Peak (Note 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD TJ,...