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  ON Semiconductor Electronic Components Datasheet  

MSD42T1 Datasheet

NPN Silicon General Purpose High Voltage Transistors

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MSD42T1 pdf
MSD42WT1, MSD42T1
Preferred Device
NPN Silicon General
Purpose High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 and
SC−59 packages which are designed for low power surface mount
applications.
Features
Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Collector-Base Voltage
V(BR)CBO
Collector-Emitter Voltage
V(BR)CEO
Emitter-Base Voltage
V(BR)EBO
Collector Current − Continuous
IC
THERMAL CHARACTERISTICS
Rating
Symbol
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
PD
TJ
Tstg
Value
300
300
6.0
150
Unit
Vdc
Vdc
Vdc
mAdc
Max Unit
150 mW
150www.DataShee°t4CU.com
−55X+ 150 °C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol Min Max Unit
Collector-Emitter Breakdown Voltage V(BR)CEO 300 − Vdc
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage V(BR)CBO 300 − Vdc
(IC = 100 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IE = 0)
V(BR)EBO 6.0
− Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
− 0.1 mA
Emitter−Base Cutoff Current
(VEB = 6.0 Vdc, IB = 0)
IEBO
− 0.1 mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
hFE1
hFE2
25 −
40 −
Collector-Emitter Saturation Voltage
(Note 2) (IC = 20 mAdc,
IB = 2.0 mAdc)
VCE(sat)
0.5 Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 6
1
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70 (SOT−323)
CASE 419
(SCALE 2:1)
3
2
1
SC−59
CASE 318D
(SCALE 2:1)
MARKING DIAGRAMS
1D M
J1D M
1D = Device Marking Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MSD42WT1 SC−70/SOT−323 3000/Tape & Reel
MSD42WT1G SC−70/SOT−323 3000/Tape & Reel
MSD42T1
SC−59
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MSD42WT1/D


  ON Semiconductor Electronic Components Datasheet  

MSD42T1 Datasheet

NPN Silicon General Purpose High Voltage Transistors

No Preview Available !

MSD42T1 pdf
120
100
80
60
40
20
0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
MSD42WT1, MSD42T1
TJ = +125°C
25°C
−55°C
1.0
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
10
100
Ceb @ 1MHz
10
1.0
0.1
0.1
Ccb @ 1MHz
1.0 10 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
1000
VCE = 10 Vdc
100
1.0 10
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
100
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ −55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ −55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ −55°C, VCE = 10 V
http://onsemi.com
2


Part Number MSD42T1
Description NPN Silicon General Purpose High Voltage Transistors
Maker ON Semiconductor
Total Page 4 Pages
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