* Max Junction Temperature 175C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* .

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits 1 2 TO−247−2LD CASE 340DC MARKING .

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

NDSH10170A

NDSH25170A

NDSH30120CDN

NDSH40120CDN

NDSH50120C

NDS02ZG-M6

NDS03ZA

NDS03ZA-M6

NDS03ZB-M6

NDS03ZD-M6

NDS03ZE-M6

NDS0605

NDS0610