NDSH10170A Datasheet | onsemi

Description Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features - Max Junction Temperature 175C - Avalanche Rated 156 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery / No Forward Recovery - These Devices are Halogen Free/BFR Free and are Ro HS pliant Applications - SMPS, Solar Inverter, UPS - Power Switching Circuits DATA SHEET .onsemi. 1. Cathode 2. Anode Schottky Diode 1 2 TO- 247- 2LD CASE 340DA MARKING DIAGRAM NDSH 10170A AYWWZZ NDSH10170A A YWW ZZ = Specific Device Code = Assembly Plant Code = Date Code (Year & Week) = Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.  Semiconductor ponents Industries, LLC, 2020 January, 2023 - Rev. 3 Publication Order Number: NDSH10170A/D ABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (Note 1) 156 m J Continuous Rectified Forward Current @ TC <...