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NDSH50120C - Silicon Carbide Schottky Diode

Datasheet Summary

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175C.
  • Avalanche Rated 380 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.
  • These Devices are Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number NDSH50120C
Manufacturer ON Semiconductor
File Size 298.38 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet NDSH50120C Datasheet
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Full PDF Text Transcription

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L NDSH50120C Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
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