Datasheet4U Logo Datasheet4U.com

NDSH10170A - SiC Schottky Diode

Datasheet Summary

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175C.
  • Avalanche Rated 156 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.
  • These Devices are Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – NDSH10170A

Datasheet Details

Part number NDSH10170A
Manufacturer ON Semiconductor
File Size 298.80 KB
Description SiC Schottky Diode
Datasheet download datasheet NDSH10170A Datasheet
Additional preview pages of the NDSH10170A datasheet.

📁 Similar Datasheet

  • NDS02ZG-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZB-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZD-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZE-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS0605 - P-Channel Enhancement Mode Field Effect Transistor (Fairchild)
  • NDS0610 - P-Channel Enhancement Mode Field Effect Transistor (Fairchild)
  • NDS331N - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
  • NDS331N - N-Channel MOSFET (VBsemi)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L NDSH10170A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Published: |