NDSH40120CDN Overview
Silicon Carbide (SiC) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased...
NDSH40120CDN Key Features
- Max Junction Temperature 175C
- Avalanche Rated 166 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
- This Device is Halide Free and RoHS pliant with Exemption 7a