* Max Junction Temperature 175°C
* Avalanche Rated 110 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* This Device is Halide Free and RoHS Compliant with Ex
NDSH30120CDN Datasheet (296.91 KB)
NDSH30120CDN
296.91 KB
Sic schottky diode.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode EliteSiC, 30 A, 1200 V, D3, TO-247-3L NDSH30120CDN 1. Anode 2. Cathode/ 3. .
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