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NDSH30120CDN Datasheet

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ON Semiconductor · NDSH30120CDN File Size : 296.91KB · 6 hits

Features and Benefits


• Max Junction Temperature 175°C
• Avalanche Rated 110 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
• This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection.

NDSH30120CDN NDSH30120CDN NDSH30120CDN
TAGS
SiC
Schottky
Diode
NDSH30120CDN
NDSH10170A
NDSH25170A
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