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NID9N05CL - Power MOSFET

Features

  • VDSS (Clamped) 52 V RDS(ON) TYP 90 mΩ ID MAX (Limited) 9.0 A Drain (Pins 2, 4).
  • Diode Clamp Between Gate and Source ESD Protection.
  • HBM 5000 V Active Over.
  • Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance.

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Full PDF Text Transcription

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www.DataSheet4U.com NID9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features VDSS (Clamped) 52 V RDS(ON) TYP 90 mΩ ID MAX (Limited) 9.
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