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NTBG040N120SC1 - SiC MOSFET

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ON Semiconductor

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NTBG040N120SC1 SiC MOSFET by ON Semiconductor - Datasheet Preview — Datasheet preview – NTBG040N120SC1

Datasheet Details

Part number	NTBG040N120SC1
Manufacturer	ON Semiconductor
File Size	325.92 KB
Description	SiC MOSFET
Datasheet	NTBG040N120SC1 Datasheet
Additional preview pages of the NTBG040N120SC1 datasheet.

Product details

Features

Typ. RDS(on) = 40 mW.
Ultra Low Gate Charge (Typ. QG(tot) = 106 nC).
Low Effective Output Capacitance (Typ. Coss = 139 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Dec 19, 2023 |