Datasheet Summary
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7
V(BR)DSS 1200 V
RDS(ON) MAX 56 mW @ 20 V
ID MAX 60 A
Drain (TAB)
Features
- Typ. RDS(on) = 40 mW
- Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
- Low Effective Output Capacitance (Typ. Coss = 139 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC-DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
VGS +25/- 15...