* Typ. RDS(on) = 40 mW
* Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
* Low Effective Output Capacitance (Typ. Coss = 139 pF)
* 100% Avalanche Tested
* TJ = 175°C
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (
NTBG040N120SC1 Datasheet (325.92 KB)
NTBG040N120SC1
325.92 KB
Sic mosfet.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7 V(BR)DSS 1200 V RDS(ON) MAX 56 mW @ 20 V I.
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