Datasheet Summary
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L
Features
- Typ. RDS(on) = 20 mW @ VGS = 15 V
- Typ. RDS(on) = 16 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 200 nC)
- Low Effective Output Capacitance (Coss = 295 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC-DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
VGS +22/- 8 V
Remended Operation
TC < 175°C VGSop +15/- 5...