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NTD5865N
N-Channel Power MOSFET 60 V, 43 A, 18 mW
Features
• Low Gate Charge • Fast Switching • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms)
Continuous Drain Current (RqJC)
Power Dissipation (RqJC)
Steady State
TC = 25°C TC = 100°C TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS VGS
ID
PD
IDM TJ, Tstg
60 ±20 ±30
43 31 71
192 −55 to
175
V V V
A
W
A °C
Source Current (Body Diode)
IS 43 A
Single Pulse Drain−to−Source L = 0.
NTD5865N Datasheet
