* Typ. RDS(on) = 20 mW @ VGS = 15 V Typ. RDS(on) = 16 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 196 nC)
* Low Effective Output Capacitance (Coss = 296 pF)
* 100% UIL Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
NTH4L020N090SC1 Datasheet (350.48 KB)
NTH4L020N090SC1
350.48 KB
Sic mosfet.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET EliteSiC, 20 mohm, 900 V, M2, TO-247-4L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V I.
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