Datasheet Summary
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
V(BR)DSS 900 V
RDS(ON) MAX 28 mW @ 15 V
ID MAX 118 A
Features
- Typ. RDS(on) = 20 mW @ VGS = 15 V
Typ. RDS(on) = 16 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 196 nC)
- Low Effective Output Capacitance (Coss = 296 pF)
- 100% UIL Tested
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC-DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
VGS +22/- 8...